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this is information on a product in full production. october 2012 doc id 16744 rev 6 1/22 22 stb21n90k5, stf21n90k5, stp21n90k5, STW21N90K5 n-channel 900 v, 0.25 typ., 18.5 a zener-protected supermesh? 5 power mosfet in a d 2 pak, to-220fp, to-220 and to-247 packages datasheet ? production data features to-220 worldwide best r ds(on) worldwide best fom (figure of merit) ultra low gate charge 100% avalanche tested zener-protected applications switching applications description these devices are n-channel power mosfets developed using supermesh? 5 technology. this revolutionary, avalanche-rugged, high voltage power mosfet technology is based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p w stb21n90k5 900 v < 0.299 18.5 a 250 w stf21n90k5 40 w stp21n90k5 250 w STW21N90K5 to-220 1 2 3 tab 1 2 3 1 2 3 to-220fp 1 3 tab d 2 pa k to-247 d(2, tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stb21n90k5 21n90k5 d 2 pak tape and reel stf21n90k5 to-220fp tu b e stp21n90k5 to-220 STW21N90K5 to-247 www.st.com
contents stb21n90k5, stf21n90k5, stp21n90k5, STW21N90K5 2/22 doc id 16744 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 stb21n90k5, stf21n90k5, stp21n90k5, STW21N90K5 electrical ratings doc id 16744 rev 6 3 /22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak, to-220, to-247 to-220fp v gs gate- source voltage 3 0v i d drain current (continuous) at t c = 25 c 18.5 18.5 (1) 1. limited by package. a i d drain current (continuous) at t c = 100 c 11.6 11.6 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 74 74 (1) a p tot total dissipation at t c = 25 c 250 40 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 6a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar , v dd = 50 v) 200 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt ( 3 ) 3 .i sd 18.5 a, di/dt 100 a/s, v ds(peak) v (br)dss peak diode recovery voltage slope 6 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d2pak to-220fp to-220 to-247 rthj-case thermal resistance junction-case max 0.5 3 .1 3 0.5 c/w rthj-amb thermal resistance junction-amb max 62.5 50 rthj-pcb thermal resistance junction-pcb max 3 0 electrical characteristics stb21n90k5, stf21n90k5, stp21n90k5, STW21N90K5 4/22 doc id 16744 rev 6 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 900 v i dss zero gate voltage drain current (v gs = 0) v ds = 900 v v ds = 900 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 45v r ds(on) static drain-source on resistance v gs = 10 v, i d = 9 a 0.25 0.299 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 1645 - pf c oss output capacitance 112 pf c rss reverse transfer capacitance 2pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 720 v -1 33 -pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -16-pf r g intrinsic gate resistance f = 1mhz open drain - 4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 720 v, i d = 18.5 a v gs =10 v (see figure 20 ) - 4 3 12 25 - nc nc nc stb21n90k5, stf21n90k5, stp21n90k5, STW21N90K5 electrical characteristics doc id 16744 rev 6 5/22 the built-in-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 720 v, i d = 10 a, r g =4.7 , v gs =10 v (see figure 22 ) - 17 27 52 40 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 19 76 a a v sd (1) 1. pulsed: pulse duration = 3 00s, duty cycle 1.5% forward on voltage i sd = 18.5 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 18.5 a, v dd = 60 v di/dt = 100 a/s, (see figure 21 ) - 548 12 46 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 18.5 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 21 ) - 660 15 45 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d = 0 3 0- - v electrical characteristics stb21n90k5, stf21n90k5, stp21n90k5, STW21N90K5 6/22 doc id 16744 rev 6 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 / d 2 pa k figure 3. thermal impedance for to-220 / d 2 pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v stb21n90k5, stf21n90k5, stp21n90k5, STW21N90K5 electrical characteristics doc id 16744 rev 6 7/22 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $ 3 6 ! 6 ' 3 6 6 6 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! 6 $ 3 6 $ 3 6 ! - v 2 $ 3 o n ) $ ! / h m 6 ' 3 6 ! - v # 6 $ 3 6 p & |